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| (R) STTH200L06TV TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF (typ) trr (max) FEATURES AND BENEFITS Up to 2 x 120 A 600 V 150C 0.95 V 80 ns K2 A1 A2 K1 K2 K1 A1 A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses ISOTOP STTH200L06TV1 DESCRIPTION The STTH200L06TV, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications (such as welding), as rectification diode. Table 2: Order Codes Part Number STTH200L06TV1 Marking STTH200L06TV1 Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) IFSM Tstg Tj RMS forward voltage Average forward current = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 65C Per diode Tc = 35C Per diode tp = 10ms sinusoidal Value 600 180 100 120 800 -55 to + 150 150 Unit V A A A C C September 2004 REV. 1 1/6 STTH200L06TV Table 4: Thermal Resistance Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value (max). 0.60 0.35 0.1 C/W Unit C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * VF ** Parameter Test conditions VR = VRRM 100 IF = 100A 0.95 Tj = 125C Forward voltage drop Tj = 25C Tj = 150C Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.93 x IF(AV) + 0.0027 IF (RMS) * tp = 5 ms, < 2% Min. Typ Max. 100 1000 1.55 1.2 Unit A Reverse leakage current Tj = 25C V 2 Table 6: Dynamic Characteristics (per diode) Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Test conditions IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/s VR =30V Tj = 125C IF = 100A VR = 400V dIF/dt = 100 A/s Tj = 25C Tj = 25C IF = 100A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 100A dIF/dt = 200 A/s VFR = 1.1 x VFmax 3.4 85 15 Min. Typ Max. Unit 80 120 20 700 A ns V ns 2/6 STTH200L06TV Figure 1: Conduction losses versus average forward current (per diode) P(W) 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 200 Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) = 0.2 = 0.1 = 0.5 180 160 140 Tj=150C (maximum values) = 0.05 =1 120 100 80 Tj=150C (typical values) Tj=25C (maximum values) T 60 40 IF(AV)(A) =tp/T tp 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VFM(V) 1.4 1.6 1.8 2.0 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Single pulse Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 60 VR=400V Tj=125C 50 IF=IF(AV) IF=2 x IF(AV) 40 IF=0.5 x IF(AV) 30 20 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 10 tp(s) 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) trr(ns) 1400 VR=400V Tj=125C Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) Qrr(nC) 5.0 4.5 4.0 VR=400V Tj=125C IF=2 x IF(AV) 1200 1000 IF=2 x IF(AV) 3.5 3.0 2.5 IF=IF(AV) 800 600 400 200 IF=IF(AV) IF=0.5 x IF(AV) IF=0.5 x IF(AV) 2.0 1.5 1.0 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0.5 0.0 0 100 dIF/dt(A/s) 200 300 400 500 3/6 STTH200L06TV Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor 1.6 1.4 1.2 1.0 1.0 0.8 0.8 0.6 0.4 0.2 0.0 0 50 100 150 0.6 0.4 0.2 QRR IF=IF(AV) VR=400V Reference: Tj=125C IF< 2 x IF(AV) VR=400V Tj=125C Figure 8: Relative variations of dynamic parameters versus junction temperature 1.4 S factor 1.2 trr IRM dIF/dt(A/s) 200 250 300 350 400 450 500 Tj(C) 0.0 25 50 75 100 125 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP(V) 8 7 6 5 4 3 2 1 IF=IF(AV) Tj=125C Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) tfr(ns) 600 550 500 450 400 350 300 250 200 150 100 IF=IF(AV) VFR=1.1 x VF max. Tj=125C dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 50 0 0 100 dIF/dt(A/s) 200 300 400 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25C 1000 100 VR(V) 10 1 10 100 1000 4/6 STTH200L06TV Figure 12: ISOTOP Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 typ. 0.976 typ. 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193 REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Table 7: Ordering Information Ordering type Marking Package STTH200L06TV1 STTH200L06TV1 ISOTOP Weight 27 g (without screws) Base qty 10 (with screws) Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 8: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 5/6 STTH200L06TV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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